型号:

IRLB3036GPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 60V 195A TO-220AB
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRLB3036GPBF PDF
产品目录绘图 TO-220AB
标准包装 50
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 195A
开态Rds(最大)@ Id, Vgs @ 25° C 2.4 毫欧 @ 165A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 140nC @ 4.5V
输入电容 (Ciss) @ Vds 11210pF @ 50V
功率 - 最大 380W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 管件
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